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Nanostructured Surfaces Investigated by Quantitative Morphological Studies

The Authors investigated and quantitatively analyzed at the nano-scale the morphology of different surfaces by atomic force microscopy. A detailed knowledge of surface morphology is mandatory for a complete study on the performances of devices, such as solar cells and light-emitting diodes.
AFM map and HHCF of InGaN/GaN quantum wells

DIFA Authors: Martina Perani, Daniela Cavalcoli

Codice DOI: DOI: 10.1088/0957-4484/27/18/185703

Altri Link Utili: Nanotechnology, 27(18), 185703, 2016

Two different tools have been combined: the analysis of the height-height correlation function (HHCF) and the determination of the mean grain size;  different materials have been analyzed: SiOxNy thin films, InGaN/GaN quantum wells and Si nanowires, grown with different techniques.  The results show that this method represents a valuable tool for gaining a deep insight on surface morphology. The approach of combining both HHCF and grain size analysis and cross-correlate the results is completely general and allow extracting a more insightful morphological analysis for nanostructured surfaces.